Peregrine Semiconductor has introduced a radation ASIC module that uses a silicon-on-sapphire CMOS process.
Stav Prodromou, president and chief executive officer described this as yet another example of satisfying customers' needs. "Peregrine was approached by a customer looking for a rad hard PLL solution, that was specifically SEU tolerant.
"By working with this customer and listening to their needs, we were able to architect a superior solution with improvements in phase noise, power consumption and radiation tolerance," Prodromou explained.
Most existing PLL's are manufactured using bipolar or BiCMOS processes. By building the PE9600 in UTSi CMOS, Peregrine is able to dramatically reduce power to one fifth that of competition while improving SEU performance by at least 5 orders of magnitude. This performance has been validated by two leading U.S. Satellite manufacturers.
The PE9600 will be offered as a standard space screened IC or as a customizable core for specific speed, packaging or functionality. Samples of the core will be available this month in the form of an evaluation kit complete with software and cables for easy testing. First space-qualified PE9600 parts are scheduled to be delivered to Peregrine's first customer-partner by year-end.
Peregrine Semiconductor Corp. designs and markets high performance integrated circuits on its patented UTSi CMOS technology. Offering benefits in integration, speed, power consumption and cost, Peregrine's leading edge products are designed for the wireless communications and commercial satellite markets. The company's high-yield UTSi process offers communications manufacturers and system designers the performance required for digital phones with the integration capability, simplicity and flexibility of conventional CMOS.
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